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| BAW56 BAW56 Surface Mount Small Signal Double-Diodes Kleinsignal-Doppel-Dioden fur die Oberflachenmontage Version 2006-07-11 Power dissipation - Verlustleistung 2.9 0.1 0.4 3 1.30.1 1.1 310 mW 85 V SOT-23 (TO-236) 0.01 g Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Mae [mm] 1 = C1 2 = C2 3 = A1/A2 Maximum ratings (TA = 25C) per diode / pro Diode Power dissipation - Verlustleistung 1) Max. average forward current - Dauergrenzstrom (dc) Repetitive peak forward current - Periodischer Spitzenstrom Non repetitive peak forward surge current Stostrom-Grenzwert tp 1 s tp 1 ms tp 1 s Ptot IFAV IFRM IFSM IFSM IFSM VRRM VR Tj TS 2.5 max Grenzwerte (TA = 25C) BAW56 310 mW 2) 250 mA 2) 450 mA 2) 0.5 A 1A 2A 85 V 70 V -55...+150C -55...+150C Repetitive peak reverse voltage - Periodische Spitzensperrspannung Reverse voltage - Sperrspannung (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Forward voltage Durchlass-Spannung IF IF IF IF Tj = 25C Tj = 150C Tj = 150C = 1 mA = 10 mA = 50 mA = 150 mA VF VF VF VF IR IR IR Kennwerte (Tj = 25C) < 715 mV < 855 mV < 1.0 V < 1.25 V < 100 nA < 30 A < 50 A Leakage current 3) Sperrstrom VR = 70 V VR = 25 V VR = 70 V 1 2 3 Total power dissipation of both diodes - Summe der Verlustleistungen beider Dioden Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BAW56 Characteristics (Tj = 25C) Max. junction capacitance - Max. Sperrschichtkapazitat VR = 0 V, f = 1 MHz Reverse recovery time - Sperrverzug IF = 10 mA uber/through IR = 10 mA bis/to IR = 1 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft CT trr RthA Kennwerte (Tj = 25C) 1.5 pF < 6 ns < 400 K/W 1) Pinning - Anschlussbelegung 3 Marking - Stempelung Double diode, common anode Doppeldiode, gemeinsame Anode 2 BAW56 = A1 or/oder JD 1 1 = C1 2 = C2 3 = A1/A2 Other available configurations - Andere lieferbare Konfigurationen Single diode - einzelne Diode Double diode, series connection - Doppeldiode, Reihenschaltung Double diode, common cathode - Doppeldiode, gemeinsame Kathode BAL99 BAV99 BAV70 120 [%] 100 1 [A] 10 -1 80 Tj = 125C 60 10 -2 40 10-3 20 Ptot 0 0 TA 50 100 150 [C] IF 10-4 Tj = 25C 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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